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1

[IEEE 2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) - Combiatore, India (2014.3.6-2014.3.8)] 2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) - Design of high speed DDR SDRAM controller with less logic utilization

Singh, Pooran, Reniwal, Bhupendra, Vijayvargiya, Vikas, Vishvakarma, Santosh Kumar

Year:

2014

Language:

english

File:

PDF, 760 KB

english, 2014

2

[IEEE 2009 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST) - Mumbai, India (2009.06.1-2009.06.2)] 2009 2nd International Workshop on Electron Devices and Semiconductor Technology - Modeling of quantum mechanical effects in ultra-thin body nanoscale double-gate FinFET

Monga, Udit, Fjeldly, Tor A., Vishvakarma, Santosh K.

Year:

2009

Language:

english

File:

PDF, 539 KB

english, 2009

3

Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance

Vijayvargiya, Vikas, Vishvakarma, Santosh Kumar

Journal:

IEEE Transactions on Nanotechnology

Year:

2014

Language:

english

File:

PDF, 851 KB

english, 2014

4

An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells

Shah, Ambika Prasad, Yadav, Nandakishor, Beohar, Ankur, Vishvakarma, Santosh Kumar

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 2.41 MB

english, 2018

5

Self-Amplified Tunneling-Based SONOS Flash Memory Device With Improved Performance

Bohara, Pooja, Vishvakarma, Santosh Kumar

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.59 MB

english, 2018

6

An ultra-low power, reconfigurable, aging resilient RO PUF for IoT applications

Khan, Sajid, Shah, Ambika Prasad, Gupta, Neha, Chouhan, Shailesh Singh, Pandey, Jai Gopal, Vishvakarma, Santosh Kumar

Journal:

Microelectronics Journal

Year:

2019

Language:

english

File:

PDF, 3.26 MB

english, 2019

7

Precise analytical model for short channel Cylindrical Gate (CylG) Gate-All-Around (GAA) MOSFET

Sharma, Dheeraj, Vishvakarma, Santosh Kumar

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.03 MB

english, 2013

8

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Unified analytical modeling of GAA nanoscale MOSFETs

Vishvakarma, Santosh K., Monga, Udit, Fjeldly, Tor A.

Year:

2010

Language:

english

File:

PDF, 492 KB

english, 2010

9

Stable, Reliable and Bit-Interleaving 12T SRAM for Space Applications: A Device Circuit Co-design

Yadav, Nandakishor, Shah, Ambika Prasad, Vishvakarma, Santosh K.

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2017

Language:

english

File:

PDF, 960 KB

english, 2017

10

On-chip Adaptive Body Bias for Reducing the Impact of NBTI on 6T SRAM Cells

Shah, Ambika Prasad, Yadav, Nandakishor, Beohar, Ankur, Vishvakarma, Santosh Kumar

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2018

Language:

english

File:

PDF, 1.43 MB

english, 2018

11

A 220 mV Robust Read-Decoupled Partial Feedback Cutting based Low-Leakage 9T SRAM for Internet of Things (IoT) Applications

Sharma, Vishal, Gopal, Maisagalla, Singh, Pooran, Vishvakarma, Santosh Kumar

Journal:

AEU - International Journal of Electronics and Communications

Year:

2018

Language:

english

File:

PDF, 84 KB

english, 2018

12

[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Tunneling Field Effect Transistors for Enhancing Energy Efficiency and Hardware Security of IoT Platforms: Challenges and Opportunities

Aditya, Japa, Nagateja, T., Vishvakarma, Santosh Kumar, Yellappa, Palagani, Choi, Jun Rim, Vaddi, Ramesh

Year:

2018

Language:

english

File:

PDF, 365 KB

english, 2018

13

Ultra-Low Power, Process-Tolerant 10T (PT10T) SRAM with Improved Read/Write Ability for Internet of Things (IoT) Applications

Singh, Pooran, Vishvakarma, Santosh

Journal:

Journal of Low Power Electronics and Applications

Year:

2017

Language:

english

File:

PDF, 10.30 MB

english, 2017

14

Process Variation and NBTI Resilient Schmitt Trigger for Stable and Reliable Circuits

Shah, Ambika Prasad, Yadav, Nandakishor, Beohar, Ankur, Vishvakarma, Santosh Kumar

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2018

File:

PDF, 1.01 MB

2018

15

NBTI stress delay sensitivity analysis of reliability enhanced Schmitt trigger based circuits

Shah, Ambika Prasad, Vishvakarma, Santosh Kumar, Cotofana, Sorin

Journal:

Microelectronics Reliability

Year:

2019

Language:

english

File:

PDF, 1.76 MB

english, 2019

16

[Communications in Computer and Information Science] VLSI Design and Test Volume 1066 (23rd International Symposium, VDAT 2019, Indore, India, July 4–6, 2019, Revised Selected Papers) || A 1.25–20 GHz Wide Tuning Range Frequency Synthesis for 40-Gb/s SerDes Application

Sengupta, Anirban, Dasgupta, Sudeb, Singh, Virendra, Sharma, Rohit, Kumar Vishvakarma, Santosh

Year:

2019

Language:

english

File:

PDF, 3.46 MB

english, 2019

17

[Communications in Computer and Information Science] VLSI Design and Test Volume 1066 (23rd International Symposium, VDAT 2019, Indore, India, July 4–6, 2019, Revised Selected Papers) || Efficient Low-Precision CORDIC Algorithm for Hardware Implementation of Artificial Neural Network

Sengupta, Anirban, Dasgupta, Sudeb, Singh, Virendra, Sharma, Rohit, Kumar Vishvakarma, Santosh

Year:

2019

File:

PDF, 895 KB

2019

18

A Novel CML Latch-Based Wave-Pipelined Asynchronous SerDes Transceiver for Low-Power Application

Kumawat, Mahesh, Choudhary, Mohit Singh, Kumar, Ravi, Singh, Gaurav, Vishvakarma, Santosh Kumar

Journal:

Journal of Circuits System and Computers

Year:

2019

Language:

english

File:

PDF, 1.14 MB

english, 2019

19

An improved read-assist energy efficient single ended P-P-N based 10T SRAM cell for wireless sensor network

Sanvale, Prachi, Gupta, Neha, Neema, Vaibhav, Shah, Ambika Prasad, Vishvakarma, Santosh Kumar

Journal:

Microelectronics Journal

Year:

2019

File:

PDF, 3.46 MB

2019

20

A symmetric D flip-flop based PUF with improved uniqueness

Khan, Sajid, Shah, Ambika Prasad, Chouhan, Shailesh Singh, Gupta, Neha, Pandey, Jai Gopal, Vishvakarma, Santosh Kumar

Journal:

Microelectronics Reliability

Year:

2020

File:

PDF, 4.86 MB

2020

21

A 2.4-GS/s Power-Efficient, High-Resolution Reconfigurable Dynamic Comparator for ADC Architecture

Raut, Gopal, Shah, Ambika Prasad, Sharma, Vishal, Rajput, Gunjan, Vishvakarma, Santosh Kumar

Journal:

Circuits, Systems, and Signal Processing

Year:

2020

Language:

english

File:

PDF, 708 KB

english, 2020

22

Soft error hardening enhancement analysis of NBTI tolerant Schmitt trigger circuit

Shah, Ambika Prasad, Rossi, Daniele, Sharma, Vishal, Vishvakarma, Santosh Kumar, Waltl, Michael

Journal:

Microelectronics Reliability

Year:

2020

File:

PDF, 1.62 MB

2020

23

An energyâefficient dataâdependent lowâpower 10T SRAM cell design for LiFi enabled smart street lighting system application

Gupta, Neha, Sharma, Vishal, Shah, Ambika P., Khan, Sajid, Huebner, Michael, Vishvakarma, Santosh K.

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2020

File:

PDF, 5.89 MB

2020

24

Analytical modeling for 3D potential distribution of rectangular gate (RecG) gate-all-around (GAA) MOSFET in subthreshold and strong inversion regions

Dheeraj Sharma, Santosh Kumar Vishvakarma

Journal:

Microelectronics Journal

Year:

2012

Language:

english

File:

PDF, 595 KB

english, 2012

25

Precise Analytical Model for Short-Channel Quadruple-Gate Gate-All-Around MOSFET

Sharma, Dheeraj, Vishvakarma, Santosh Kumar

Journal:

IEEE Transactions on Nanotechnology

Year:

2013

Language:

english

File:

PDF, 1.33 MB

english, 2013

26

[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - Effect of doping profile on tunneling field effect transistor performance

Vijayvargiya, Vikas, Vishvakarma, Santosh

Year:

2013

Language:

english

File:

PDF, 302 KB

english, 2013

27

[IEEE 2013 IEEE Third International Conference on Information Science and Technology (ICIST) - Yangzhou, Jiangsu, China (2013.03.23-2013.03.25)] 2013 IEEE Third International Conference on Information Science and Technology (ICIST) - Session 7: Multimedia and web services

Singh, Pooran, Vishvakarma, Santosh Kr.

Year:

2013

Language:

english

File:

PDF, 837 KB

english, 2013

28

[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - Analysis of crossover point and threshold voltage for triple gate MOSFET

Sharma, Dheeraj, Vishvakarma, Santosh

Year:

2013

Language:

english

File:

PDF, 239 KB

english, 2013

29

[IEEE 2012 International Conference on Emerging Electronics (ICEE 2012) - Mumbai, India (2012.12.15-2012.12.17)] 2012 International Conference on Emerging Electronics - Isomorphic polynomial based precise analytical modeling of 3D potential distribution for surrounding gate gate-all-around MOSFET

Sharma, Dheeraj, Vishvakarma, Santosh Kumar

Year:

2012

Language:

english

File:

PDF, 650 KB

english, 2012

30

[IEEE 2014 International Conference on Devices, Circuits and Communications (ICDCCom) - Ranchi (2014.9.12-2014.9.13)] 2014 International Conference on Devices, Circuits and Communications (ICDCCom) - A Non-Volatile Memory MONOS Device for Improved Stability Applications

Gupta, Anupreet, Anwer, Hajra, Gupta, Deepika, Vijayvargia, Vikas, Vishvakarma, Santosh Kumar

Year:

2014

Language:

english

File:

PDF, 436 KB

english, 2014

31

Analyses of DC and analog/RF performances for short channel quadruple-gate gate-all-around MOSFET

Sharma, Dheeraj, Vishvakarma, Santosh Kumar

Journal:

Microelectronics Journal

Year:

2015

Language:

english

File:

PDF, 1.55 MB

english, 2015

32

[ACM Press the 25th edition - Pittsburgh, Pennsylvania, USA (2015.05.20-2015.05.22)] Proceedings of the 25th edition on Great Lakes Symposium on VLSI - GLSVLSI '15 - Dataline Isolated Differential Current Feed/Mode Sense Amplifier for Small I cell SRAM Using FinFET

Reniwal, Bhupendra Singh, Vijayvargiya, Vikas, Singh, Pooran, Vishvakarma, Santosh Kumar, Dwivedi, Devesh

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

33

Ultra-Fast Current Mode Sense Amplifier for Small\(I_{\mathrm{CELL}}\)SRAM in FinFET with Improved Offset Tolerance

Reniwal, Bhupendra Singh, Vijayvargiya, Vikas, Vishvakarma, Santosh Kumar, Dwivedi, Devesh

Journal:

Circuits, Systems, and Signal Processing

Year:

2016

Language:

english

File:

PDF, 1.96 MB

english, 2016

34

Improved Short-Channel Characteristics With Long Data Retention Time in Extreme Short-Channel Flash Memory Devices

Gupta, Deepika, Vishvakarma, Santosh Kumar

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.51 MB

english, 2016

35

Impact of LDD Depth Variations on the Performance Characteristics of SONOS NAND Flash Device

Gupta, Deepika, Vishvakarma, Santosh

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 659 KB

english, 2016

36

[IEEE 2015 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS) - Indore, India (2015.12.21-2015.12.23)] 2015 IEEE International Symposium on Nanoelectronic and Information Systems - Effect of Gate and Channel Engineering on Digital Performance Parameters Using Tied (3T) and Independent (4T) Double Gate MOSFETs

Jagwani, Neha, Vijayvargiya, Vikas, Vishvakarma, Santosh Kumar

Year:

2015

Language:

english

File:

PDF, 249 KB

english, 2015

37

[IEEE 2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia) - Hyderabad, India (2015.11.27-2015.11.29)] 2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia) - Characterization of BE-SONOS flash memory using rare-earth materials in tunnel barrier with improved memory dynamics

Kaur, Mansimran, Gupta, Deepika, Vijayvargiya, Vikas, Vishvakarma, Santosh kumar, Neema, Vaibhav

Year:

2015

Language:

english

File:

PDF, 1.08 MB

english, 2015

38

Performance enhancement of asymmetrical underlap 3D-cylindrical GAA-TFET with low spacer width

Vishvakarma, Santosh K., Beohar, Ankur

Journal:

Micro & Nano Letters

Year:

2016

Language:

english

File:

PDF, 315 KB

english, 2016

39

Improvement of Short Channel Performance of Junction-Free Charge Trapping 3-D NAND Flash Memory

Gupta, Deepika, Vishvakarma, Santosh

Journal:

Micro & Nano Letters

Year:

2016

Language:

english

File:

PDF, 441 KB

english, 2016

40

[IEEE 2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS) - Gwalior, India (2016.12.19-2016.12.21)] 2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS) - Investigation of DC Characteristic on DG-Tunnel FET with High-K Dielectric Using Distinct Device Parameter

Thakre, Shraddha, Beohar, Ankur, Vijayvargiya, Vikas, Yadav, Nandakishor, Vishvakarma, Santosh Kumar

Year:

2016

Language:

english

File:

PDF, 336 KB

english, 2016

41

[IEEE 2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS) - Gwalior, India (2016.12.19-2016.12.21)] 2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS) - Analysis of Single-Trap-Induced Random Telegraph Noise on Asymmetric High-k Spacer FinFET

Yadav, Nandakishor, Beohar, Ankur, Vishvakarma, Santosh K.

Year:

2016

Language:

english

File:

PDF, 239 KB

english, 2016

42

Impact of Device Engineering on Analog/RF Performances of Tunnel Field Effect Transistor

Vijayvargiya, Vikas, Reniwal, Bhupendra Singh, Singh, Pooran, Vishvakarma, Santosh Kumar

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 553 KB

english, 2017

43

Analysis of trap-assisted tunnelling in asymmetrical underlap 3D-cylindrical GAA-TFET based on hetero-spacer engineering for improved device reliability

Beohar, Ankur, Yadav, Nandakishor, Vishvakarma, Santosh Kumar

Journal:

Micro & Nano Letters

Year:

2017

Language:

english

File:

PDF, 478 KB

english, 2017

44

A Unified Scalable Quasi-Ballistic Transport Model of GFET for Circuit Simulations

Upadhyay, Abhishek Kumar, Kushwaha, Ajay Kumar, Vishvakarma, Santosh Kumar

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.39 MB

english, 2018

45

Ultra-Low Power High Stability 8T SRAM for Application in Object Tracking System

Singh, Pooran, Kumar Vishvakarma, Santosh

Journal:

Year:

2018

Language:

english

File:

PDF, 2.75 MB

english, 2018

46

[IEEE 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hsinchu (2017.10.18-2017.10.20)] 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Subthreshold darlington pair based NBTI sensor for reliable CMOS circuits

Shah, Ambika Prasad, Yadav, Nandakishor, Beohar, Ankur, Vishvakarma, Santosh Kumar

Year:

2017

Language:

english

File:

PDF, 383 KB

english, 2017

47

[IEEE 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hsinchu (2017.10.18-2017.10.20)] 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Design of 3D cylindrical GAA-TFET based on germanium source with drain underlap for low power applications

Beohar, Ankur, Shah, Ambika Prasad, Yadav, Nandakishor, Vishvakarma, Santosh Kumar

Year:

2017

Language:

english

File:

PDF, 227 KB

english, 2017

48

[IEEE 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hsinchu (2017.10.18-2017.10.20)] 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Source drain Gaussian doping profile analysis for high ON current of InGaAs based HEMT

Yadav, Nandakishor, Shah, Ambika Prasad, Beohar, Ankur, Vishvakarma, Santosh Kumar

Year:

2017

Language:

english

File:

PDF, 371 KB

english, 2017

49

Evaluation of static noise margin of 6T SRAM cell using SiGe/SiC asymmetric dual-k spacer FinFETs

Gopal, Maisagalla, Sharma, Vishal, Vishvakarma, Santosh K.

Journal:

Micro & Nano Letters

Year:

2017

Language:

english

File:

PDF, 533 KB

english, 2017

50

Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications

Beohar, Ankur, Yadav, Nandakishor, Shah, Ambika Prasad, Vishvakarma, Santosh Kumar

Journal:

Journal of Computational Electronics

Year:

2018

Language:

english

File:

PDF, 1.77 MB

english, 2018